Abstract
Multicomponent oxide (GaxIn1−x)2O3 films are prepared on (0001) sapphire substrates to realize a tunable band-gap by magnetron sputtering technology followed by thermal annealing. The optical properties and band structure evolution over the whole range of compositions in ternary compounds (GaxIn1−x)2O3 are investigated in detail. The X-ray diffraction spectra clearly indicate that (GaxIn1−x)2O3 films with Ga content varying from 0.11 to 0.55 have both cubic and monoclinic structures, and that for films with Ga content higher than 0.74, only the monoclinic structure appears. The transmittance of all films is greater than 86% in the visible range with sharp absorption edges and clear fringes. In addition, a blue shift of ultraviolet absorption edges from 380 to 250 nm is noted with increasing Ga content, indicating increasing band-gap energy from 3.61 to 4.64 eV. The experimental results lay a foundation for the application of transparent conductive compound (GaxIn1−x)2O3 thin films in photoelectric and photovoltaic industry, especially in display, light-emitting diode, and solar cell applications.
摘要
采用磁控溅射技术和热退火技术在(0001)蓝宝石衬底上制备了多组分氧化物(GaxIn1−x)2O3薄膜, 实现可调带隙。详细研究了三元化合物(GaxIn1−x)2O3在整个组成范围内的光学性质和能带结构演化。X射线衍射谱表明, Ga含量在0.11至0.55之间的(GaxIn1−x)2O3薄膜既有立方结构, 也有单斜结构, 而Ga含量高于0.74的(GaxIn1−x)2O3薄膜只有单斜结构。在可见光范围, 所有薄膜透光率均高于86%, 吸收边清晰, 条纹清晰。此外, 随着Ga含量增加, 紫外吸收边出现380至250 nm的蓝移, 表明禁带能从3.61 eV增加至4.64 eV。实验结果为透明导电化合物半导体(GaxIn1−x)2O3薄膜在光电和光伏行业的应用, 特别是在显示器、发光二极管和太阳能电池的应用奠定了基础。
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Project supported by the National Natural Science Foundation of China (Nos. 61764001, 61665001, 51665009, 11965009, 61874036, and 61805053), the Guangxi Science and Technology Base and Talent Special Project, China (Nos. AD18281084, AD18281030, AD18281034, and AD18281037), the Guangxi Key Laboratory of Precision Navigation Technology and Application, China (No. DH201808), the One Hundred Person Project of Guangxi as well as the Thousands of Key Teacher Training Project of Guangxi Education Department, China, the Innovation Project of Guilin University of Electronic Technology Graduate Education, China (No. 2019YCXS021), and the Natural Science Foundation of Shanghai, China (No. 19ZR1420100)
Contributors
Fabi ZHANG and Zujun QIN designed the research. Jinyu SUN, Haiou LI, Juan ZHOU, and Rong WANG prepared the samples. Tangyou SUN, Tao FU, Gongli XIAO, Qi LI, Xingpeng LIU, and Xiuyun ZHANG measured the samples. Fabi ZHANG and Jinyu SUN drafted the manuscript. Daoyou GUO and Xianghu WANG helped organize the manuscript. Fabi ZHANG, Jinyu SUN, and Zujun QIN revised and finalized the paper.
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Fabi ZHANG, Jinyu SUN, Haiou LI, Juan ZHOU, Rong WANG, Tangyou SUN, Tao FU, Gongli XIAO, Qi LI, Xingpeng LIU, Xiuyun ZHANG, Daoyou GUO, Xianghu WANG, and Zujun QIN declare that they have no conflict of interest.
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Zhang, F., Sun, J., Li, H. et al. Band-gap tunable (GaxIn1−x)2O3 layer grown by magnetron sputtering. Front Inform Technol Electron Eng 22, 1370–1378 (2021). https://doi.org/10.1631/FITEE.2000330
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DOI: https://doi.org/10.1631/FITEE.2000330