Charge Carrier Production and Mobility in Anthracene Crystals

R. G. Kepler
Phys. Rev. 119, 1226 – Published 15 August 1960
PDFExport Citation

Abstract

The drift mobilities of electrons and holes in anthracene crystals have been measured using a pulsed photoconductivity technique. The mobilities found at room temperature vary from about 0.3 cm2/volt sec to about 3 cm2/volt sec, depending on the crystal orientation, and the mobilities increase as the temperature is lowered. The wavelength dependence of the number of charge carriers produced by a pulse of light, as well as other experimental data, indicates that the charge carriers are not produced in the interior of anthracene crystals, but that they are released from a surface layer of the crystal either directly by photons or by excitons which migrate to the surface.

  • Received 15 April 1960

DOI:https://doi.org/10.1103/PhysRev.119.1226

©1960 American Physical Society

Authors & Affiliations

R. G. Kepler

  • Central Research Department, Experimental Station, E. I. du Pont de Nemours and Company, Wilmington, Delaware

References (Subscription Required)

Click to Expand
Issue

Vol. 119, Iss. 4 — August 1960

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review Journals Archive

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×