Journal of Electroanalytical Chemistry and Interfacial Electrochemistry
The growth and properties of thin oxide layers on tantalum electrodes
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2022, Corrosion ScienceCitation Excerpt :Its anti-corrosion property is attribute to the nano-scale spontaneously formed Ta2O5 passivation film on the surface, which is capable of withstanding the corrosion of sulfuric and nitric acid [27–29]. More importantly, it exhibits a distinct n-type semi-conducting behavior when the thickness of Ta2O5 is less than 15 nm, which is beneficial to electricity conduction [30]. Therefore, tantalum is considered as one of the promising coatings.
Evolution of resistive switching mechanism through H <inf>2</inf> O <inf>2</inf> sensing by using TaO <inf>x</inf> -based material in W/Al <inf>2</inf> O <inf>3</inf> /TaO <inf>x</inf> /TiN structure
2018, Applied Surface ScienceCitation Excerpt :Up to date, various kinds of materials like HfO2 [4–7], TiO2 [8,9], Al2O3 [10,11] have been reported as RRAM switching material, but TaOx based RRAM shows better performance in terms of retention [12,13], endurance [14], low current operation [14] etc. This material is also attractive for its high dielectric constant (εr ∼25 [15]), complementary metal-oxide-semiconductor (CMOS) compatibility, high band gap (4 eV [16]), low electron affinity (3.2 eV [17]), high thermal stability (up to 1000 °C [18]), and stable oxidation states [19]. It is well known that the switching in oxygen-based RRAMs occurs because of oxygen vacancy migration which results the formation and rupture of the conducting filament [20].
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On leave of absence from Univers. Nacional de Cordoba, Fac. Ciencias Quimicas, Cordoba, Argentina.