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Molecular-beam epitaxy-grown HgCdTe infrared detector: Material physics, structure design, and device fabrication

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Abstract

Infrared (IR) detectors have important applications in numerous civil and military sectors. HgCdTe is one of the most important materials for IR detector manufacture. This review systematically discusses the progress of HgCdTe materials grown via molecular-beam epitaxy (MBE) for IR detection in terms of material physics, structure design, and fabrication. The material physics of HgCdTe includes crystal information, band structure, and electrical and optical properties. The characterization methods of the As-grown HgCdTe materials are also summarized. Then, four design structures of HgCdTe for IR detectors, with multilayer, superlattice, double-layer heterojunction, and barrier properties, which significantly improve the device performance, are discussed. The third section summarizes the studies on HgCdTe MBE-grown on different substrates, including CdZnTe, Si, and GaSb, in recent decades. This review discusses the factors influencing the growth of the HgCdTe film and their relationships and optimal conditions. Finally, we present the prospects and challenges associated with the fabrication and applications of HgCdTe materials for IR detectors.

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Authors and Affiliations

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 611731, China

    Xiaohui Wang, Mengbo Wang, Yulong Liao, Huaiwu Zhang & Tianlong Wen

  2. Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou, 313001, China

    Xiaohui Wang

  3. Kunming Institute of Physics, Kunming, 650223, China

    Baohui Zhang

  4. Global Innovative Centre for Advanced Nanomaterials, School of Engineering, The University of Newcastle, Callaghan, Newcastle, NSW, 2308, Australia

    Jiabao Yi

  5. School of Physics, University of Electronic Science and Technology of China, Chengdu, 611731, China

    Liang Qiao

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  1. Xiaohui Wang
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Correspondence to Yulong Liao or Liang Qiao.

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This work was supported by the National Natural Science Foundation of China (Grant Nos. 52072059, 12274061, 11774044, and 61971094), the Natural Science Foundation of Sichuan (Grant Nos. 2022NSFSC0870, and 2022NSFSC0485), the Foundation of Sichuan Excellent Young Talents (Grant No. 2021JDJQ0015), and the Fundamental Research Funds for the Central Universities (Grant No. ZYGX2020J023).

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Wang, X., Wang, M., Liao, Y. et al. Molecular-beam epitaxy-grown HgCdTe infrared detector: Material physics, structure design, and device fabrication. Sci. China Phys. Mech. Astron. 66, 237302 (2023). https://doi.org/10.1007/s11433-022-2003-2

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