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Comparison of experimental results with theoretical models for the temperature dependence of the band gap of AlxGa1-xN epilayers

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Abstract

The band gap energies AlxGa1-xN epilayers prepared on two different substrates were assessed using Fourier Transform Infrared (FTIR) reflectance spectroscopy, photoluminescence (PL) and scanning electron microscopy electron dispersive spectroscopy (SEM–EDS). The results were compared to various theoretical formulae to calculate the band gap, and deviations elucidated.

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Data availability

The data not included in the article, generated during and/or analyses during the current study, are available from the corresponding author on reasonable request from the following link: https://drive.google.com/drive/folders/17Om9mEaiyPCAp4Uq7BqJmpt5sHPsd2v7?usp=sharing

References

  1. S.N. Mohammad, A.A. Salvador, H. Morkoç, Proc. IEEE 83, 1306 (1995)

    Article  CAS  Google Scholar 

  2. S.R. Lee, A.F. Wright, M.H. Crawford, G.A. Petersen, J. Han, R.M. Biefeld, Appl. Phys. Lett. 74, 3344 (1999)

    Article  CAS  Google Scholar 

  3. I. Vurgaftman, J.R. Meyer, L.R. Ram-Mohan, J. Appl. Phys. 89, 5815 (2001)

    Article  CAS  Google Scholar 

  4. I. Vurgaftman, J.R. Meyer, J. Appl. Phys. 94, 3675 (2003)

    Article  CAS  Google Scholar 

  5. T. Hanada, Basic properties of ZnO, GaN and related materials in oxide and nitride semiconductors, in Advances in materials research, vol. 12, ed. by T. Yao, S.K. Hong (Springer, Berlin, 2009), pp.10–18

    Google Scholar 

  6. S.J. Pearton, C.R. Abernathy, M.E. Overberg, G.T. Thaler, D.P. Norton, N. Theodoropoulou, A.F. Hebard, Y.D. Park, F. Ren, J. Kim, L.A. Boatner, J. Appl. Phys. 93, 1 (2003)

    Article  CAS  Google Scholar 

  7. D. Li, K. Jiang, X. Sun, C. Guo, Adv Optics Photon 10, 43 (2018)

    Article  CAS  Google Scholar 

  8. U. Tisch, B. Meyler, O. Katz, E. Finkman, J. Salzman, J. Appl. Phys. 89, 2676 (2001)

    Article  CAS  Google Scholar 

  9. Y.P. Varshni, Physica (Utrecht) 34, 149 (1967)

    Article  CAS  Google Scholar 

  10. K.B. Nam, J. Li, J.Y. Lin, H.X. Jiang, Appl. Phys. Lett. 85, 3489 (2004)

    Article  CAS  Google Scholar 

  11. N. Nepal, J. Li, M.L. Nakarmi, J.Y. Li, H.X. Jiang, Appl. Phys. Lett. 87, 242104 (2005)

    Article  Google Scholar 

  12. J.C. Phillips, Bonds and bands in semicoductors (Academic Press, NY, 1973)

    Google Scholar 

  13. M. Ferhat, Phys. Stat. Sol. b 241, R38 (2004)

    Article  CAS  Google Scholar 

  14. M. Holtz, T. Prokofyeva, M. Seon, K. Copeland, J. Vanbuskirk, S. Williams, S.A. Nikishin, V. Tretyakov, H. Temkin, J. Appl. Phys. 89(7), 977 (2001)

    Google Scholar 

  15. Q.S. Paduano, D.W. Weyburne, L.O. Bouthillette, S.-Q. Wang, M.N. Alexander, Jpn. J. Appl. Phys. 41, 1936 (2002)

    Article  CAS  Google Scholar 

Download references

Acknowledgements

Funding provided by the National Research Foundation (NRF) is gratefully acknowledged. Any opinion, findings and conclusions or recommendations expressed in this article are those of the authors, and therefore the NRF does not accept liability in regards thereto. Helpful discussions and the supply of samples by Prof Magnus Wagener (NMU), and technical assistance by Dr Japie Engelbrecht, University of Stellenbosch, and Mrs Chanie Neveling (NMU) are also acknowledged.

Funding

This study was supported by the National Research Foundation, grant number G104-8570.

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Authors and Affiliations

  1. Centre for HRTEM, NMU, Box 77000, Gqberha (Port Elizabeth), 6031, South Africa

    J. A. A. Engelbrecht, W. E. Goosen, E. G. Minnaar & M. E. Lee

  2. University of the Witwatersrand, Gauteng, 2050, South Africa

    B. Sephton

  3. Department of Electrical and Electronic Engineering, University of Stellenbosch, Stellenbosch, South Africa

    H. A. Engelbrecht

  4. Physics Department, NMU, Box 77000, Gqberha (Port Elizabeth), 6031, South Africa

    J. R. Botha

  5. Department of Physics, Chemistry and Biology, Linköping University, 581 83, Linköping, Sweden

    A. Henry

Authors
  1. J. A. A. Engelbrecht
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  2. B. Sephton
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  3. H. A. Engelbrecht
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  4. J. R. Botha
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  5. W. E. Goosen
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  6. E. G. Minnaar
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  7. M. E. Lee
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  8. A. Henry
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Contributions

JAAE contributed to the conceptualization, methodology, software, validation, investigation and writing original draft; BS contributed to the investigation and drafting initial report; HAE contributed to the assessment and validation; JRB contributed to the sample preparation and characterisation; WEG contributed to the characterisation; E.G.M contributed to the characterisation; MEL contributed to the writing and validation and AH contributed to the sample preparation. AH sadly passed away in 2016 but participated in this research.

Corresponding author

Correspondence to J. A. A. Engelbrecht.

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All research performed by other researchers which had been published was referenced in the current article. Any researchers who contributed to this article were acknowledged by inclusion as co-authors. No financial gains were made during the production of this article. No animals or humans were hurt during the production of this article. Neither the main author, nor any co-authors have any contact with, or are related in any way to any of the editors or staff of this journal.

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Engelbrecht, J.A.A., Sephton, B., Engelbrecht, H.A. et al. Comparison of experimental results with theoretical models for the temperature dependence of the band gap of AlxGa1-xN epilayers. J Mater Sci: Mater Electron 33, 22492–22498 (2022). https://doi.org/10.1007/s10854-022-09027-6

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