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HomeSolid State PhenomenaSolid State Phenomena Vol. 312The Features of the Lateral Photovoltaic Effect in...

The Features of the Lateral Photovoltaic Effect in the Fe₃O₄/SiO₂/n-Si Structure Depending on Silicon Substrate Orientation

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Abstract:

We report on the results of a study of the lateral photovoltaic effect in theFe3O4/SiO2/n-Si structure grown on Si(001) and Si(111) substrates. It was found that in theFe3O4/SiO2/Si(001) structure the LPE sensitivity is a half times as much, and the photoresponseparameters are about 3 times less than those in the Fe3O4/SiO2/Si(111) structure. It is supposed thata higher sensitivity and faster photoresponse in the Fe3O4/SiO2/Si(001) structure, compared with theFe3O4/SiO2/Si(111) structure, are caused by a lower density of surface states at the SiO2/Si(001)interface than at the SiO2/Si(111) interface.

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Physics and Technology of Nanostructured Materials V

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Periodical:

Solid State Phenomena (Volume 312)

Pages:

98-104

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.312.98

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Online since:

November 2020

Authors:

Tatiana A. Pisarenko*, Vladimir V. Korobtsov, Vyacheslav V. Balashev, Artem A. Dimitriev, Sophie V. Bondarenko

Keywords:

Built-In Electrical Field, Interface States, Lateral Photovoltage, Lateral Photovoltaic Effect, Magnetite, Metal-Oxide-Semiconductor Structure, Photogenerated Carriers, Photoresponse, Silicon

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