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AlN and AlGaN by MOVPE for UV Light Emitting Devices

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Abstract:

The fundamental growth issues of AlN and AlGaN on sapphire and SiC using metalorganic vapor phase epitaxy, particularly the growth of AlN and AlGaN on a groove-patterned template are reviewed. In addition, the conductivity control of AlGaN is shown. The conductivity control of p-type AlGaN, particularly the realization of a high hole concentration, is essential for realizing high-efficiency UV and DUV LEDs and LDs.

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Periodical:

Materials Science Forum (Volume 590)

Pages:

175-210

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.590.175

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Online since:

August 2008

Authors:

Hiroshi Amano, Masataka Imura, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki

Keywords:

AlGaN, Aluminum Nitride (AlN), DUV LD, DUV LED, MOVPE, Patterned Template, UV LD, UV-LED

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