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Effect of Film Thickness and Annealing Temperature in Stress-Induced Damage in Metal Films
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Self-Assembly of Nano-Sized Arrays on Highly Oriented Thin Films of Poly(tetrafluoroethylene)
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Atomic Assembly of Thin Film Materials
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The Role of Segregation in InGaAs Heteroepitaxy
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HomeMaterials Science ForumMaterials Science Forum Vols. 539-543Atomic Assembly of Thin Film Materials

Atomic Assembly of Thin Film Materials

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Abstract:

The atomic-scale structures and properties of thin films are critically determined by the various kinetic processes activated during their atomic assembly. Molecular dynamics simulations of growth allow these kinetic processes to be realistically addressed at a timescale that is difficult to reach using ab initio calculations. The newest approaches have begun to enable the growth simulation to be applied for a wide range of materials. Embedded atom method potentials can be successfully used to simulate the growth of closely packed metal multilayers. Modified charge transfer ionic + embedded atom method potentials are transferable between metallic and ionic materials and have been used to simulate the growth of metal oxides on metals. New analytical bond order potentials are now enabling significantly improved molecular dynamics simulations of semiconductor growth. Selected simulations are used to demonstrate the insights that can be gained about growth processes at surfaces.

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THERMEC 2006

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Periodical:

Materials Science Forum (Volumes 539-543)

Pages:

3528-3533

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.539-543.3528

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Online since:

March 2007

Authors:

X.W. Zhou, D.A. Murdick, B. Gillespie, J.J. Quan, Haydn N.G. Wadley, Ralf Drautz, David Pettifor

Keywords:

Interatomic Potential, Molecular Dynamic (MD), Vapor Deposition

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