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Electrical Characteristics and Microstructures of Eu2O3-Doped Bi4Ti3O12 Ceramics

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Abstract:

The electrical properties of Eu-doped bismuth titanate，Bi4-xEuxTi3O12 (BET) ceramics prepared by a conventional electroceramic technique were investigated. XRD analyses revealed Bi-layered perovskite structure in all samples. SEM micrographs showed randomly oriented and plate-like morphology. For the samples with x=0.4 and 1.0 the current-voltage characteristics exhibited negative differential resistance behaviors and their P-V hysteresis loops were characterized by large leakage current, whereas for the samples with x=0.6 and 0.8 the current-voltage characteristics showed simple ohmic behaviors and their P-E hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BST ceramic with x=0.8 were above 16μC/cm2 and 70KV/cm , respectively.

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Periodical:

Key Engineering Materials (Volume 492)

Pages:

210-213

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.492.210

Citation:

Cite this paper

Online since:

September 2011

Authors:

Min Chen, X.A. Mei, J. G. Liu, J. Liu, Chong Qing Huang

Keywords:

Bismuth Titanate, Doping, Ferroelectric, Film

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