Abstract
We have investigated the selective deposition of Cu films on the mercaptopropyltrimethoxysilane-ocatadecyltrichlorosilane (MPTMS-OTS) patterned glass substrate using (hfac)Cu(DMB) and C2H5I as precursors at 110°C. The low temperature deposition of Cu without iodine exhibited the difficulties of Cu nucleation on MPTMS with its low Cu growth rate of 22 nm/min and long induction period of approximately 4 min at 110°C. The addition of iodine significantly enhanced the surface diffusion of Cu adatoms on the MPTMS surface and thus led to increased nucleation and growth rate (28 nm/min) at 110°C. With these advantages, we successfully increased the maximum thickness of Cu selectively deposited on the MPTMS patterned lines from 57 nm to 140 nm without selectivity loss by adding iodine to (hfac)Cu(DMB)(3,3-dymethyl-1-butene) at 110°C. Consequently, the low temperature process for the selective deposition of Cu on the MPTMSOTS patterned surface can be utilized for the fabrication of flexible electronics.
Similar content being viewed by others
References
A. Jain, K. M. Chi, T. T. Kodas, and M. J. Hampden-Smith, J. Electrochem. Soc. 140, 1434 (1993).
S. P. Murarka, R. J. Gutmann, A. E. Kaloyeros, and W.A. Lanford, Thin Solid Films 236, 257 (1993).
S. P. Murarka, Mater. Sci. Eng. R. 19, 87 (1997).
C. W. Park, W. H. Cho, K. T. Kim, H. C. Choi, and C. H. Oh, Proc. of the 3rd International Meeting on Information Display, p. 661, Society for Information Display (2003).
H. C. Choi, S. G. Hong, B. H. Lim, S. W. Lee, and S. D. Yeo, Proc. of the 4th International Meeting on Information Display, p. 19, Society for Information Display (2004).
H. J. Yang, J. Lee, S. Kim, Y. K. Ko, H. J. Shin, J. G. Lee, C. Kim, M. M. Sung, H. J. Bang, B. S. Cho, Y. H. Bae, J. H. Lee, D. H. Kim, C. O. Jeong, S.Y. Kim, and S. K. Lim, J. Appl. Phys. 100, 113705 (2006).
N. G. Semaltianos, J. L. Pastol, and P. Doppelt, Appl. Surf. Sci. 222, 102 (2004).
N. G. Semaltianos, J. L. Pastol, and P. Doppelt, Surf. Sci. 562, 157 (2004).
X. Liu, Q. Wang, S. Wu, and Z. Liu, J. Electrochem. Soc. 153, 142 (2006).
X. Liu, Q. Wang, and L. -P. Chen, Appl. Surf. Sci. 255, 3789 (2009).
D. D. Gandhi, M. lane, Y. Zhou, A. P. Sing, S. Nayak, U. Tisch, M. Eizenberg, and G. Ramanath, Nature 447, 299 (2007).
A. Hibi, H. Tonegawa, K. Tonokura, K. Satake, H. Sakamoto, and M. Koshi, Surf. Coat. Technol. 200, 3117 (2006).
J. Lim and C. Lee, Solid-State Electron. 45, 2083 (2001).
W. Park and C. Lee, Mater. Sci. Eng. B 85, 80 (2001).
H. J. Park, S. H. Go, K. W. Lee, and J. G. Lee, Electron. Mater. Lett. 4, 181 (2008).
A. R. Kim, H. J. Park, K. H. Jeong, J. G. Lee, H. S. Nam, E. G. Lee, and C. H. Kang, Thin Solid Films. 262, 3827(2009).
H. Park, A. kim, C. Lee, J. S. Lee, and J. G. Lee, Appl, Phys. Lett. 94, 213508 (2009).
O.-K. Kwon, H. -B. Lee, S. -W. Kang and H. -S. Park, J. Vac. Sci. Technol. A 20, 408 (2002).
J. F. Shackelford and W. Alexander, Materials Science and Engineering Handbook, CRC Press, Florida (2001).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Rahman, M.A., Park, H., Kim, A. et al. Selective Deposition of Copper with Iodine Assisted Growth of MOCVD on an MPTMS Monolayer Surface at a Low Temperature. Electron. Mater. Lett. 6, 209–213 (2010). https://doi.org/10.3365/eml.2010.12.209
Published:
Issue Date:
DOI: https://doi.org/10.3365/eml.2010.12.209