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Graphitic Schottky Contacts to Si formed by Energetic Deposition

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Abstract

Carbon films deposited by filtered cathodic vacuum arc have been used to form high quality Schottky diodes on p-Si. Energetic deposition with an applied substrate bias of -1 kV and with a substrate temperature of 100 °C has produced carbon diodes with rectification ratios of ∼ 3 × 106, saturation currents of ∼0.02 nA and ideality factors close to unity (n = 1.05). Simulations were used to estimate the effective work function and the thickness of an interfacial mixed (C/SiO2) layer from the current/voltage characteristics of the diodes.

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Authors and Affiliations

  1. School of Electrical and Computer Engineering, RMIT University, GPO Box 2476V, Melbourne, VIC 3001, Australia

    Mohammad Saleh N Alnassar, Patrick W. Leech, Geoff K. Reeves & Anthony S. Holland

  2. School of Applied Sciences, RMIT University, GPO Box 2476V, Melbourne, VIC 3001, Australia

    Desmond W. M. Lau, Dougal G. McCulloch & Jim G. Partridge

  3. Centre of Technology, RMIT University, Hồ Chí Minh City, Vietnam

    Hiep N. Tran

Authors
  1. Mohammad Saleh N Alnassar
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  2. Patrick W. Leech
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  3. Geoff K. Reeves
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  4. Anthony S. Holland
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  5. Desmond W. M. Lau
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  6. Dougal G. McCulloch
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  7. Hiep N. Tran
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  8. Jim G. Partridge
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Alnassar, M.S.N., Leech, P.W., Reeves, G.K. et al. Graphitic Schottky Contacts to Si formed by Energetic Deposition. MRS Online Proceedings Library 1786, 51–56 (2015). https://doi.org/10.1557/opl.2015.824

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  • DOI: https://doi.org/10.1557/opl.2015.824

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