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High Current Density in μc-Si PECVD Diodes for Low Temperature Applications

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Abstract

The development of microcrystalline diodes grown at low temperature by PECVD techniques is reported. Current densities near 200 A/cm2 at + 2 V, and rectification ratios on the order of 105 at +/- 1V and 107 at +/- 2V were obtained. The reverse currents were in the nano-ampere range. Correlations between deposition conditions and film quality are presented. The effects of mesa formation and subsequent treatments designed to reduce process damage are discussed: annealing conditions yield an increase in forward current, and a decrease in reverse current. Fabrication conditions are compatible with applications requiring low temperature processes (e. g., multi-layer structures, molecular layers, or plastic substrates and coatings).

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Acknowledgments

We acknowledge Margie Flores for process assistance, Dick Baugh, Carl Taussig, Ping Mei, Warren Jackson, Ted Kamins, Fred Perner and Frank Jeffrey for invaluable discussions, Milo Overbay and Greg Long for Raman and XRD measurements.

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Authors and Affiliations

  1. Hewlett-Packard Laboratories, Palo Alto, CA, 94304, USA

    Patricia A. Beck, Janice H. Nickel & Peter G. Hartwell

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  1. Patricia A. Beck
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  2. Janice H. Nickel
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  3. Peter G. Hartwell
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Beck, P.A., Nickel, J.H. & Hartwell, P.G. High Current Density in μc-Si PECVD Diodes for Low Temperature Applications. MRS Online Proceedings Library 808, 209–214 (2003). https://doi.org/10.1557/PROC-808-A4.30

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  • DOI: https://doi.org/10.1557/PROC-808-A4.30

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