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Inverse TMR Effect in Co0.9Fe0.1/SrTiO3/La0.7Sr0.3MnO3 Tunnel Junctions

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Abstract

Magnetic tunnel junctions of Co0.9Fe0.1/SrTiO3 (STO)/ La0.7Sr0.3MnO3 (LSMO) with a spin-valve structure having an antiferromagnetic MnIr layer have been fabricated by sputtering. Junction magnetoresistance (MR) behavior and its dependence on the bias voltage are examined for junctions with epitaxial STO barrier formed under different sputtering conditions. Spin dependent transport measurements show that these junctions exhibit spin-valve type MR loops with an inverse (positive) MR of the ratio of 14-22 % at 4.2 K. The inverse MR observed is asymmetric with respect to the bias voltage direction. Stoichiometric STO barrier, as characterized by Rutherford backscattering (RBS) analysis, is found to result in very large asymmetric bias dependence, while the junctions with nonstoichiometric STO barrier exhibit the symmetric bias dependence. Our results suggest that the nonstoichiometry of STO barrier modifies the electronic structures of electrode/barrier interfaces, and thereby reducing the asymmetry of bias voltage dependence of junction MR.

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Authors and Affiliations

  1. Dept. of Crystalline Materials Science, Nagoya Univ., Nagoya, 464-8603, Japan

    M. Sugiyama, H. Asano & M. Matsui

  2. Hitachi Ltd., Central Research Laboratory, Kokubunji, 185-8601, Japan

    J. Hayakawa, S. Kokado & K. Itou

  3. Hitachi Metals Ltd., Kumagaya, 360-0843, Japan

    A. Sakuma

  4. Hitachi Ltd., Advanced Research Laboratory, Akanuma, 350-0395, Japan

    M. Ichimura

Authors
  1. M. Sugiyama
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  2. H. Asano
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  3. M. Matsui
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  4. J. Hayakawa
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  5. S. Kokado
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  6. K. Itou
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  7. A. Sakuma
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  8. M. Ichimura
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Sugiyama, M., Asano, H., Matsui, M. et al. Inverse TMR Effect in Co0.9Fe0.1/SrTiO3/La0.7Sr0.3MnO3 Tunnel Junctions. MRS Online Proceedings Library 690, F2.4 (2001). https://doi.org/10.1557/PROC-690-F2.4

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  • DOI: https://doi.org/10.1557/PROC-690-F2.4

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