Abstract
We have developed a new amorphous silicon image sensor technology using a matrix array of amorphous silicon thin film transistors and photodiodes, where the amorphous silicon nip photodiode is fabricated on top of a thick insulating layer, on top of the thin film transistor array. We call this ‘diode on top’ technology or DOTTY. The active diode area can be as high as 93%, compared to 50% for our conventional photodiode-TFT technology. This leads to a higher signal to noise performance, which is important for medical X-ray applications.
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Acknowledgement
We would like to thank Dr U Schiebel (Philips Research, Aachen) for discussions on X-ray imaging and N C Bird for developing the read-out electronics.
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Powell, M.J., Glasse, C., French, I.D. et al. Amorphous Silicon Photodiode-Thin Film Transistor Image Sensor with Diode on Top Structure. MRS Online Proceedings Library 467, 863–868 (1997). https://doi.org/10.1557/PROC-467-863
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DOI: https://doi.org/10.1557/PROC-467-863