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Factors Affecting Image Quality for Megavoltage and Diagnostic X-Ray a-Si:H Imaging Arrays.

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Abstract

Two factors which could affect the image quality of the a-Si:H arrays under development by our collaboration are the temporal drift of the leakage current of the sensors and the capture and release of charge in deep trapping states in the sensors. Data for both of these factors are reported, the implications for imaging are discussed, and strategies for reducing or eliminating their effects are suggested.

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References

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Acknowledgement

This work is supported by a grant from the National Institutes of Health, Grant No. 5-RO1-CA51397-03. We would like to thank Kwok Lam for valuable discussions.

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Authors and Affiliations

  1. Department of Radiation Oncology, University of Michigan, Ann Arbor, Ml, 48109

    L. E. Antonuk, J. Yorkston, W. Huang, J. Boudry & E. J. Morton

  2. Department of Physics, University of Michigan, Ann Arbor, Ml, 48109

    M. J. Longo

  3. Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA, 94304

    R. A. Street

Authors
  1. L. E. Antonuk
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  2. J. Yorkston
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  3. W. Huang
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  4. J. Boudry
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  5. E. J. Morton
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  6. M. J. Longo
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  7. R. A. Street
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Antonuk, L.E., Yorkston, J., Huang, W. et al. Factors Affecting Image Quality for Megavoltage and Diagnostic X-Ray a-Si:H Imaging Arrays.. MRS Online Proceedings Library 258, 1069–1074 (1992). https://doi.org/10.1557/PROC-258-1069

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  • DOI: https://doi.org/10.1557/PROC-258-1069

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