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Memory Effect in Simple Cu Nanogap Junction

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Abstract

We have investigated the resistance switching effect in Cu nanogap junction. Nanogap structures were created by means of electromigration and their electrical properties were measured in a high vacuum chamber. The measured current-voltage characteristics exhibited a clear negative resistance and memory effect with a large on-off ratio of over 105. The estimation from I–V curves indicates that the resistance switching was caused by the gap size change, which implies that the nanogap switching (NGS) effect also occurs in Cu electrodes, a popular wiring material in an integrated circuit.

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Authors and Affiliations

  1. Nanosystem Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1, Higashi, Tsukuba, Ibaraki, Japan

    Hiroshi Suga, Masayo Horikawa, Tetsuo Shimizu & Yasuhisa Naitoh

  2. Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki, Japan

    Hisao Miyazak, Shunsuke Odaka & Kazuhito Tsukagoshi

Authors
  1. Hiroshi Suga
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  2. Masayo Horikawa
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  3. Hisao Miyazak
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  4. Shunsuke Odaka
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  5. Kazuhito Tsukagoshi
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  6. Tetsuo Shimizu
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  7. Yasuhisa Naitoh
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Suga, H., Horikawa, M., Miyazak, H. et al. Memory Effect in Simple Cu Nanogap Junction. MRS Online Proceedings Library 1250, 1005 (2010). https://doi.org/10.1557/PROC-1250-G10-05

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  • DOI: https://doi.org/10.1557/PROC-1250-G10-05

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