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New Nonvolatile Memory Effect Showing Reproducible Large Resistance Ratio Employing Nano-gap Gold Junction

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Abstract

A large negative resistance is observed in the I-V characteristics of gold nanogap junction when high-bias voltages are applied. This phenomenon is characteristic behaviour on the nanometre scale; it only occurs for gap widths slightly under 13 nm. Furthermore, this junction exhibits a non-volatile resistance hysteresis when the bias voltage is reduced very rapidly from a high level to around 0 V, and when the bias voltage is reduced slowly. This non-volatile resistance change occurs as a result of changes in the gap width between the metal electrodes, brought about by the applied bias voltage.

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Authors and Affiliations

  1. Nanotechnology Research Institute, Advanced Industrial Science and Technology, 1-1-1 Higashi, 305-8562, Tsukuba, Ibaraki, Japan

    Yasuhisa Naitoh, Masayo Horikawa & Tetsuo Shimizu

  2. Precursory Research for Embryonic Science and Technology, Japan Science and Technology Agency, 4-1-8, Honcho, 332-0012, Kawaguchi, Saitama, Japan

    Yasuhisa Naitoh

Authors
  1. Yasuhisa Naitoh
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  2. Masayo Horikawa
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  3. Tetsuo Shimizu
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Naitoh, Y., Horikawa, M. & Shimizu, T. New Nonvolatile Memory Effect Showing Reproducible Large Resistance Ratio Employing Nano-gap Gold Junction. MRS Online Proceedings Library 997, 408 (2007). https://doi.org/10.1557/PROC-0997-I04-08

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  • DOI: https://doi.org/10.1557/PROC-0997-I04-08

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