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Low-Temperature Polycrystalline Silicon Thin-Film Transistors and Circuits on Flexible Substrates

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Abstract

Low-defect-density polycrystalline Si on flexible substrates can be instrumental in realizing the full potential of macroelectronics. Direct deposition or solid-phase crystallization techniques are often incompatible with polymers and produce materials with high defect densities. Excimer-laser annealing is capable of producing films of reasonable quality directly on polymer and metallic substrates. Sequential lateral solidification (SLS) is an advanced pulsed-laser-crystallization technique capable of producing Si films on polymers with lower defect density than can be obtained via excimer-laser annealing. Circuits built directly on polymers using these SLS films show the highest performance reported to date.

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Authors
  1. P. C. van der Wilt
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  2. M. G. Kane
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  3. A. B. Limanov
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  4. A. H. Firester
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  5. L. Goodman
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  6. J. Lee
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  7. J. R. Abelson
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  8. A. M. Chitu
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  9. James S. Im
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van der Wilt, P.C., Kane, M.G., Limanov, A.B. et al. Low-Temperature Polycrystalline Silicon Thin-Film Transistors and Circuits on Flexible Substrates. MRS Bulletin 31, 461–465 (2006). https://doi.org/10.1557/mrs2006.119

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