Abstract
Thin C: N films were prepared by rf diode sputtering of a graphite target in a mixed argon/nitrogen plasma. We have observed a systematic variation of the properties of these C: N films with an increase in the nitrogen partial pressure. XPS, AES, and TEM studies show that nitrogen will stabilize the diamond sp3 bonding. From XPS studies, we found that the density of our C: N films is increased from 1.37 × 1023 atoms/cm3 to 1.63 × 1023 atoms/cm3 using a 100% nitrogen plasma. The energy gap of our nitrogen carbon also shows an increase from 1.1 eV to 1.4 eV using a 100% nitrogen plasma. The mechanical properties also are shown to be enhanced for certain applications. By using the same method, we can also show that it can produce 100% amorphous C: N films which are more diamond-like as compared with other methods.
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References
A. A. Khan and J. A. Woollam, J. Appl. Phys. 55, 4299 (1984).
L.P. Andersson, Thin Solid Films 86, 193 (1981).
E. G. Spencer, P. N. Schmit, D. J. Joy, and F. J. Sansalone, Appl. Phys. Lett. 29, 228 (1976).
M. J. Mirtich, D. M. Swec, and J. C. Angus, Thin Solid Films 131, 245 (1985).
C. Weissmantel, G. Reisse, H-J. Erler, F. Henny, K. Bewilogua, U. Ebersbach, and C. Schwer, Thin Solid Films 63, 315 (1979).
B. A. Banks and S. Rutledge, J. Vac. Sci. Technol. 21, 807 (1982).
M. Somolowski, A. Somolosska, B. Gomeili, A. Michalski, A. Rusem, and Z. Rmanowski, J. Cryst. Growth 47, 421 (1979).
K. Enke, Thin Solid Films 80, 227 (1981).
L. Holland and S. M. Ojaha, Thin Solid Films 58, 107 (1979).
L.P. Anderson, S. Berg, H. Norstom, R. Olaison, and S. Tonia, Thin Solid Films 63, 155 (1979).
S. Berg and L. P. Anderson, Thin Solid Films 58, 117 (1979).
D. S. Whitemell and R. Williamson, Thin Solid Films 35, 225 (1976).
B. Myerson and F.W. Smith, Solid State Commun. 34, 531 (1980).
B. Myerson and F.W. Smith, J. Non-Cryst. Solids 35, 435 (1980).
S. Fujimori and K. Nagai, Jpn. J. Appl. Phys. 20, L194 (1981).
C. J. Torng, J. M. Sivertsen, and J. H. Judy, in Perpendicular Magnetic Recording Proceeding, Japan, p. 169 (1989).
C. J. Torng, T. Yeh, J. M. Sivertsen, and J. H. Judy, in Diamond, Boron Nitride, Silicon Carbide and Related Wide Bandgap Semiconductors, edited by J.T. Glass, R. F. Messier, and N. Fijimori (Mater. Res. Soc. Symp. Proc. 162, Pittsburgh, PA, 1990).
T. Miyazawa, S. Misawa, S. Yoshida, and S-I. Gonda, J. Appl. Phys. 55, 188 (1984).
J. Hauser, J. Non-Cryst. Solids 23, 21 (1977).
N. Wada, P. J. Gaczi, and S. A. Solin, J. Non-Cryst. Solids 35, 543 (1980).
M. Morgan, Thin Solid Films 7, 313 (1971).
T. Yeh, C. Chang, J. M. Sivertsen, and J. H. Judy, in Perpendicular Magnetic Recording Proceeding, Japan, p. 163 (1989).
J. Robertson, Advances in Physics 35, 317 (1986).
P. G. Lurie and J. M. Wilson, Surf. Sci. 65, 476 (1977).
F. R. McFeely, S. P. Kowalczyk, L. Ley, R. G. Cavell, R. A. Pollak, and D. A. Shirely, Phys. Rev. B 9, 5268 (1974).
Hsias-chu Tsai and D. B. Bogy, J. Vac. Sci. Technol. A5 (6), 3287 (1987).
B. E. Williams and J.T. Glass, J. Mater. Res. 4, 373 (1989).
S. R. Kasi, H. Kang, and J.W. Rabalais, J. Vac. Sci. Technol. A6 (3), 1788 (1988).
T. J. Moraver and T.W. Orent, J. Vac. Sci. Technol. 18 (2), 226 (1981).
S. R. Kasi, H. Kang, and J.W. Rabalais, J. Chem. Phys. 88 (9), 5914 (1988).
T. Mori and Y. Namba, J. Appl. Phys. 55, 3276 (1984).
N.F. Mott, Conduction in Non-Crystalline Materials (Clarendon, Oxford, 1987), p. 88.
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Torng, C.J., Sivertsen, J.M., Judy, J.H. et al. Structure and bonding studies of the C: N thin films produced by rf sputtering method. Journal of Materials Research 5, 2490–2496 (1990). https://doi.org/10.1557/JMR.1990.2490
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DOI: https://doi.org/10.1557/JMR.1990.2490