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Laser synthesis and crystallographic characterization of ultrafine SiC powders

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Abstract

High purity, ultrafine SiC powders have been produced from gas phase reactants (SiH4, C2H2) in a CO2 laser induced process. The flow reactor designed to operate with a medium power (10–50 W) continuous wave CO2 laser source is described. The mechanism of gas phase reactions involved has been investigated by means of on-line optical diagnostics. Powders produced have been characterized by means of conventional chemical and spectroscopic methods. The x-ray results point out a growth mechanism by coalescence; i.e., whole islands move in the flame to take part in binary collisions, analogously to that observed for particles produced by inert gas evaporation.

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Authors and Affiliations

  1. ENEA, Dip. TIB, U.S. Fis. Appl., CRE Frascati, C.P. 65, I-00044, Frascati, Roma, Italy

    R. Fantoni & E. Borsella

  2. ENEA guest, USA

    S. Piccirillo

  3. ENEA and Università di Venezia guest, USA

    R. Ceccato

  4. Dipartimento di Chimica Fisica, D.D. 2137, 1-30123, Venezia, Italy

    S. Enzo

Authors
  1. R. Fantoni
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  2. E. Borsella
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  3. S. Piccirillo
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  4. R. Ceccato
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  5. S. Enzo
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Fantoni, R., Borsella, E., Piccirillo, S. et al. Laser synthesis and crystallographic characterization of ultrafine SiC powders. Journal of Materials Research 5, 143–150 (1990). https://doi.org/10.1557/JMR.1990.0143

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  • DOI: https://doi.org/10.1557/JMR.1990.0143

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