ABSTRACT

Zirconium silicide has drawn a lot of attention, because they exhibit good thermal stability over 1273 K (M. Le Flem et al. 2008) and excellent mechanical properties at high temperatures over 1273 K. Beside these excellent mechanical properties at the high temperature, Zr silicide also has a relatively low resistivity (13-34 μΩ/cm3), leading to a potential material of the gate structure in the MOSFET fabrication (B. Lu et al. 2008).