Effect of Oxidation Amount on Gradual Switching Behavior in Reset Transition of Al/TiO2-Based Resistive Switching Memory and Its Mechanism for Multilevel Cell Operation

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Published 20 April 2012 • Copyright (c) 2012 The Japan Society of Applied Physics
, , Citation Jeong-Hoon Oh et al 2012 Jpn. J. Appl. Phys. 51 04DD16 DOI 10.1143/JJAP.51.04DD16

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Author affiliations

1 Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, Seoul 151-742, Republic of Korea

2 DRAM Process Architecture Team, Memory Division, Semiconductor Business, Samsung Electronics Co., Ltd., Hwasung, Gyeonggi 445-701, Republic of Korea

Dates

  1. Received 25 September 2011
  2. Accepted 20 December 2011
  3. Published

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Abstract

To analyze and explain the gradual reset switching property of the bipolar switching resistive random access memory (RRAM) for multilevel cell (MLC) operation, the effect of the amount of plasma oxidation on the gradual reset switching behavior of the Al/TiO2-based RRAM cell structure is investigated. The device that undergoes plasma oxidation in a shorter time has a better ON/OFF current (ION/IOFF) ratio and shows increased ON current (ION). The device that undergoes long plasma oxidation occasionally shows the step reset switching behavior because of the thick conductive filament formation in the ON state. This is clearly explained by the different conduction mechanisms during the ON state.

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10.1143/JJAP.51.04DD16