Abstract
Electric properties of resistive switching in gold nanogap junction were investigated to discuss a physical model of high-to-low resistive switching of the junction. The threshold voltages during the switching are in proportion to logarithm of resistances immediately before the switching. This result indicates that the threshold voltages are depended on electric field, the critical value of which is estimated at about 1.8 V/nm. This implies that the high-to-low resistive switching can be explained by field-induced-migration model.