Abstract
Bottom-contact polymerized 10,12-tricosadiynoic acid (PTDA) field-effect transistors (FETs) were fabricated successfully by the Langmuir–Blodgett (LB) method. The surface morphology of PTDA LB films deposited on a FET substrate was imaged by atomic force microscopy (AFM). The current–voltage (I–V) characteristics of the bottom-contact PTDA FETs were measured in detail. The equation of the FET characteristics was derived with consideration of the carrier transport mechanism of holes conveyed along the channel, and the effective mobility was evaluated. To clarify the carrier injection and succeeding carrier accumulation and carrier transport from a source electrode to a drain electrode across PTDA, a Maxwell–Wagner model was employed to analyze the I–V characteristics of the bottom-contact PTDA FETs. Finally, to further clarify the carrier injection, we measured the capacitance–frequency (C–F) characteristics of the bottom-contact PTDA FETs and the surface potential formed across PTDA LB films on a Au electrode.