Electron Tunneling through Chemical Oxide of Silicon

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Copyright (c) 1995 The Japan Society of Applied Physics
, , Citation Kenji Saito et al 1995 Jpn. J. Appl. Phys. 34 L609 DOI 10.1143/JJAP.34.L609

1347-4065/34/5B/L609

Abstract

Carrier transport between gold and n+-Si through chemical oxides of Si was measured for the first time using an atomic force microscope with a conducting probe. It was found from the theoretical calculation of carrier transport in 0.7-nm-thick chemical oxide formed in a mixed solution of H2SO4 and H2O2 that the carrier transport can be explained as a direct tunneling of electrons through chemical oxide.

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10.1143/JJAP.34.L609