Abstract
We have demonstrated the growth of vertical InP nanowires via the self-assisted vapor–liquid–solid mode on an InP(111) substrate. Single nanowires exhibit a highly uniform diameter along the axial direction despite their 15 µm length. We show direct evidence of the self-assisted growth mode by performing a compositional analysis of the NW tip. We demonstrated that the In particle at the NW tip could be removed by modifying the V/III source material ratio during growth. Single InP nanowires exhibit a distinct TO phonon peak and show the luminescence of the excitonic emission at 4 K.