Abstract
The degree of disordering and the thickness d of disordered layers and their effect on the band gap Eg of single-crystal Si(111) under Ar+-ion bombardment are studied for the first time. It is shown that the d value at ion energies of E0 = 1 and 2 keV is ~(100–120) and ~(150–160) Å, respectively. In this case, the density of states of electrons in the Si(111) valence band significantly changes, the light transmittance decreases to K = 55–60%, and the Eg value increases by ~10%. Under Ni+-ion bombardment, surface disordering is accompanied by a sharp change in the composition of the surface layers and, as a result, the K value decreases to 5–10%. After heating at T = 900 K, nanocrystals (at doses of D ≤ 1015 cm–2) and NiSi2 nanofilms (at D = 6 × 1016 cm–2) are formed.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
REFERENCES
S. Schuppler, S. L. Friedman, M. A. Marcus, D. L. Adler, Y.-H. Xie, F. M. Ross, T. D. Harris, W. L. Brown, Y. J. Chabal, L. E. Brus, and P. H. Citrin, Phys. Rev. Lett. 72, 2648 (1994).
S. Horiguchi, M. Nagase, K. Shiraishi, H. Kageshima, Y. Takahashi, and K. Murase, Jpn. J. Appl. Phys. 40, L29 (2001). https://doi.org/10.1143/JJAP.40.L29
S. H. Tolbert, A. B. Herhold, L. E. Brus, and A. P. Alivisatos, Phys. Rev. Lett. 76, 4384 (1996).
L. T. Canham, Appl. Phys. Lett. 57, 1046 (1990).
K. Masuko, M. Shigematsu, T. Hashiguchi, D. Fujishima, M. Kai, N. Yoshimura, T. Yamaguchi, Y. Ichihashi, T. Mishima, N. Matsubara, T. Yamanishi, T. Takahama, M. Taguchi, E. Maruyama, and S. Okamoto, IEEE J. Photovolt. 4, 1433 (2014).
X. Li, S. He, and S. S. Talukdar, Langmuir 19, 8490 (2003).
A. Puzder, A. J. Williamson, J. C. Grossman, and G. Galli, Phys. Rev. Lett. 88, 097401 (2002).
M. S. Bresler, O. V. Gusev, E. I. Terukov, A. Froitzheim, and W. Fuhs, Phys. Solid State 46, 13 (2004).
C. Buerhop, S. Wirsching, S. Gehre, T. Pickel, T. Winkler, A. Bemm, J. Mergheim, C. Camus, J. Hauch, and C. J. Brabec, in Proceedings of the2017IEEE 44th Photovoltaic Specialists Conference, p. 3500.
P. Procel, G. Yang, O. Isabella, and M. Zeman, Sol. Energy Mater. Sol. Cells 186, 66 (2018).
I. A. Karpovich, S. V. Tikhov, E. L. Shobolov, and I. A. Andryushenko, Semiconductors 40, 314 (2006).
M. W. Ullah, A. Kuronen, K. Nordlund, F. Djurabekova, P. A. Karaseov, K. V. Karabeshkin, and A. I. Titov, J. Appl. Phys. 114, 183511 (2013).
B. E. Umirzakov, D. A. Tashmukhamedova, E. U. Boltaev, and A. A. Dzhurakhalov, Mat. Sci. Eng. B. 101, 124 (2003).
S. B. Donaev, F. Djurabekova, D. A. Tashmukhamedova, and B. E. Umirzakov, Phys. Status Solidi C 12, 89 (2015). https://doi.org/10.1002/pssc.201400156
B. E. Umirzakov, D. A. Tashmukhamedova, M. K. Ruzibaeva, F. G. Djurabekova, and S. B. Danaev, Nucl. Instrum. Methods Phys. Res., Sect. B 326, 322 (2014).
B. E. Umirzakov, D. A. Tashmukhamedova, G. Kh. Allayarova, and Zh. Sh. Sodikjanov, Tech. Phys. Lett. 45, 356 (2019).
P. G. Petrosyan and L. N. Grigoryan, Tech. Phys. 62, 465 (2017).
D. M. Sedrakyan, P. G. Petrosyan, and L. N. Grigoryan, Tech. Phys. 60, 724 (2015).
I. M. Bronshtein and B. S. Fraiman, Secondary Electron Emission (Nauka, Moscow, 1969), pp. 170, 244 [in Russian].
Author information
Authors and Affiliations
Corresponding author
Ethics declarations
The authors declare that they have no conflict of interest.
Additional information
Translated by E. Bondareva
Rights and permissions
About this article
Cite this article
Umirzakov, B.E., Tashmukhamedova, D.A., Tashatov, A.K. et al. Effect of the Disordering of Thin Surface Layers on the Electronic and Optical Properties of Si(111). Semiconductors 54, 1424–1429 (2020). https://doi.org/10.1134/S1063782620110263
Received:
Revised:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063782620110263