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Silicon nanoclusters ncl-Si in a hydrogenated amorphous silicon suboxide matrix a-SiOx:H (0 < x < 2)

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Abstract

Published data concerning plasma methods of the fabrication and study of silicon nanoclusters ncl-Si in crystalline (c-SiO2) and amorphous (a-SiOx:H) matrices are reviewed. The effect of radio-fre- quency (RF) and direct-current (dc) discharge modulation on the growth kinetics of ncl-Si is considered. The results of infrared spectroscopy, mass spectrometry, and laser-beam scanning of the plasma composition are analyzed. The behavior of nanoparticles is described depending on their charge and size in plasma under the effect of electric, magnetic, and gravity forces and under the influence of the dynamics of gases contained within the plasma. Infrared spectroscopy data on the a-SiOx:H film matrix are analyzed. The photoluminescence properties of ncl-Si fabricated using different techniques are described.

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  1. Ioffe Physical–Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    Yu. K. Undalov & E. I. Terukov

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Original Russian Text © Yu.K. Undalov, E.I. Terukov, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 7, pp. 887–898.

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Undalov, Y.K., Terukov, E.I. Silicon nanoclusters ncl-Si in a hydrogenated amorphous silicon suboxide matrix a-SiOx:H (0 < x < 2). Semiconductors 49, 867–878 (2015). https://doi.org/10.1134/S1063782615070222

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