Abstract
The structural and luminescence characteristics of porous silicon produced by chemical etching are studied. From analysis of the behavior of luminescence spectra with temperature, it is shown that the luminescence band of porous silicon samples produced by chemical etching presents a superposition of two bands. It is concluded that one of the bands is due to excitonic recombination in amorphous silicon nano-clusters smaller than 3 nm in dimensions and the other band corresponds to recombination of charge carriers via defects in silicon oxide. At room temperature, the latter band prevails.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
L. T. Canham, Appl. Phys. Lett. 57, 1046 (1990)
B. M. Bullakh, N. E. Korsunkskaya, L. Yu. Khomenkova, T. R. Staraya, and M. K. Sheikman, Fiz. Tekh. Poluprovodn. 40, 614 (2006) [Semiconductors 40, 598 (2006)].
S. Schuppler, S. L. Friedman, M. A. Marcus, D. L. Adler, Y.-H. Xie, F. M. Ross, T. D. Harris, W. L. Brown, Y. J. Chabal, L. E. Brus, and P. H. Citrin, Phys. Rev. Lett. 72, 2648 (1994).
Y. Kanemitsu, H. Uto, Y. Masumoto, T. Matsumoto, T. Futagi, and H. Mimura, Phys. Rev. B 48, 2827 (1993).
J. Heitman, R. Scholz, M. Schmidt, and M. Zacharias, J. Non-Cryst. Sol. 299, 1075 (2002).
Y. Kansawa, T. Kageyama, S. Takeoka, M. Fujii, S. Hayashi, and K. Yamamoto, Solid State Commun. 104, 533 (1997).
D. Kovalev, H. Heckler, G. Polisski, and F. Koch, Phys. Stat. Solidi B 215, 871 (1999).
P. D. Calcott, K. J. Nash, L. T. Canham, M. J. Kane, and D. Brunhead, J. Phys.: Condens. Matter 5, L91 (1993).
Y. Kanemitsu and Sh. Okamoto, Phys. Rev. B 56, R1696 (1997).
S. M. Prokes and O. J. Glembocki, Phys. Rev. B 49, 2238 (1994).
G. G. Qin, H. Z. Song, B. R. Zhang, J. Lin, J. Q. Duan, and G. Q. Yao, Phys. Rev. B 54, 2548 (1996).
M. Chang and Y. F. Chen, J. Appl. Phys. 82, 3514 (1997).
G. G. Qin and Y. Q. Jia, Solid State Commun. 86, 559 (1993).
Yu. A. Skryshevskii and V. A. Skryshevskii, J. Appl. Phys. 89, 2711 (2001).
M. V. Wolkin, J. Jorne, P. M. Fauchet, G. Allan, and C. Delerue, Phys. Rev. Lett. 82, 197 (1999).
T. Makimura, Y. Kunii, N. Ono, and K. Murakami, Appl. Surf. Sci. 388, 127 (1998).
X. L. Wu, S. J. Xiong, D. L. Fan, Y. Gu, X. M. Bao, G. G. Siu, and M. J. Stokes, Phys. Rev. B 62, R7759 (2000).
N. E. Korsunskaya, E. B. Kaganovich, L. Yu. Khomenkova, B. M. Bulach, B. R. Dzhumaev, G. V. Beketov, and E. G. Manoilov, Appl. Surf. Sci. 166, 349 (2000).
M. S. Brandt, H. D. Fuchs, M. Stutzmann, J. Weber, and M. Cardona, Solid State Commun. 81, 307 (1992).
E. V. Svezhentsova, F. F. Sizov, L. Yu. Khomenkova, N. N. Mel’nichenko, and L. M. Kapitanchuk, Metallofiz. Noveish. Tekhnol. 27, 1395 (2005).
L. Khomenkova, N. Korsunskaya, T. Torchynska, V. Yukhimchuc, B. Jumayev, A. Many, Y. Goldstein, E. Savir, and J. Jedrzejeewski, J. Phys.: Condens. Matter 14, 13217 (2003).
V. A. Makara, M. M. Melnichenko, K. V. Svezhentsova, L. Yu. Khomenkova, and O. M. Shmyryeva, Semicond. Phys. Quant. Electron. Optoelectron. 6, 492 (2003).
Y. P. Varshni, Physica (Amsterdam) 34, 149 (1967).
C. Ternon, F. Gourbilleau, C. Dufour, J. Doualan, and B. Garrido, J. Luminecs. 99, 361 (2002).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © N.E. Korsunskaya, T.R. Stara, L.Yu. Khomenkova, K.V. Svezhentsova, N.N. Melnichenko, F.F. Sizov, 2010, published in Fizika i Tekhnika Poluprovodnikov, 2010, Vol. 44, No. 1, pp. 82–86.
Rights and permissions
About this article
Cite this article
Korsunskaya, N.E., Stara, T.R., Khomenkova, L.Y. et al. The nature of emission of porous silicon produced by chemical etching. Semiconductors 44, 79–83 (2010). https://doi.org/10.1134/S1063782610010136
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063782610010136