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Effect of adsorption of group VI atoms on the silicon work function

  • Low-Dimensional Systems and Surface Physics
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Abstract

A model of the adsorption of S, Se, and Te atoms on silicon is proposed. The model adequately describes the variation of the work function of the S/Si(100) and Se/Si(111) systems over the coverage range from zero to one monolayer. The S-Si, Se-Si, and Te-Si adsorption bond energies are estimated using the bonding-orbital method.

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, St. Petersburg, 194021, Russia

    S. Yu. Davydov

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  1. S. Yu. Davydov
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__________

Translated from Fizika Tverdogo Tela, Vol. 47, No. 9, 2005, pp. 1711–1714.

Original Russian Text Copyright © 2005 by Davydov.

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Davydov, S.Y. Effect of adsorption of group VI atoms on the silicon work function. Phys. Solid State 47, 1779–1783 (2005). https://doi.org/10.1134/1.2045367

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  • DOI: https://doi.org/10.1134/1.2045367

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