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Straining Suspended Graphene

The electronic properties of graphene are best displayed by suspended sheets free from contact with an underlying substrate. Klimov et al. (p. 1557) probed how deformation of suspended graphene sheets could lead to further tuning of its electronic properties with a scanning tunneling microscope; the graphene sheets could also be deformed via an electric field from an underlying electrode. Spectroscopic studies reveal that the induced strain led to charge-carrier localization into spatially confined quantum dots, an effect consistent with the formation of strain-induced pseudomagnetic fields.

Abstract

We determined the electromechanical properties of a suspended graphene layer by scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) measurements, as well as computational simulations of the graphene-membrane mechanics and morphology. A graphene membrane was continuously deformed by controlling the competing interactions with a STM probe tip and the electric field from a back-gate electrode. The probe tip–induced deformation created a localized strain field in the graphene lattice. STS measurements on the deformed suspended graphene display an electronic spectrum completely different from that of graphene supported by a substrate. The spectrum indicates the formation of a spatially confined quantum dot, in agreement with recent predictions of confinement by strain-induced pseudomagnetic fields.

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References and Notes

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Published In

Science
Volume 336 | Issue 6088
22 June 2012

Submission history

Received: 9 February 2012
Accepted: 30 April 2012
Published in print: 22 June 2012

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Acknowledgments

We thank M. Stiles and S. Adam for valuable discussions and S. Blankenship and A. Band for technical assistance. The U.S. National Science Foundation is gratefully acknowledged via grants CMMI-1069076 and CMMI-1129826 (T.L. and S.Z.) and grant CMMI-0841840 (C.A.W. and S.D.S.).

Authors

Affiliations

Nikolai N. Klimov
Center for Nanoscale Science and Technology, National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, USA.
Maryland NanoCenter, University of Maryland, College Park, MD 20742, USA.
Physical Measurement Laboratory, NIST, Gaithersburg, MD 20899, USA.
Suyong Jung
Center for Nanoscale Science and Technology, National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, USA.
Maryland NanoCenter, University of Maryland, College Park, MD 20742, USA.
Present address: Korea Research Institute of Standards and Science, Daejon, Republic of Korea.
Shuze Zhu
Department of Mechanical Engineering, University of Maryland, College Park, MD 20742, USA.
Maryland NanoCenter, University of Maryland, College Park, MD 20742, USA.
Department of Mechanical Engineering, University of Maryland, College Park, MD 20742, USA.
C. Alan Wright
Department of Mechanical Engineering, University of Maryland, College Park, MD 20742, USA.
Santiago D. Solares [email protected]
Maryland NanoCenter, University of Maryland, College Park, MD 20742, USA.
Department of Mechanical Engineering, University of Maryland, College Park, MD 20742, USA.
David B. Newell
Physical Measurement Laboratory, NIST, Gaithersburg, MD 20899, USA.
Nikolai B. Zhitenev
Center for Nanoscale Science and Technology, National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, USA.
Joseph A. Stroscio [email protected]
Center for Nanoscale Science and Technology, National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, USA.

Notes

To whom correspondence should be addressed. E-mail: [email protected] (S.D.S.); [email protected] (T.L.); [email protected] (J.A.S.)

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