A [2]Catenane-Based Solid State Electronically Reconfigurable Switch
Abstract
A solid state, electronically addressable, bistable [2]catenane-based molecular switching device was fabricated from a single monolayer of the [2]catenane, anchored with phospholipid counterions, and sandwiched between an n-type polycrystalline silicon bottom electrode and a metallic top electrode. The device exhibits hysteretic (bistable) current/voltage characteristics. The switch is opened at +2 volts, closed at −2 volts, and read at ∼0.1 volt and may be recycled many times under ambient conditions. A mechanochemical mechanism for the action of the switch is presented and shown to be consistent with temperature-dependent measurements of the device operation.
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REFERENCES AND NOTES
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For the eicosanoic acid control, the subphase was held at 25°C, and the monolayer was compressed at 10 cm2/min to a surface pressure of 1.0 mN/m and then at 2.0 cm2/min to the deposition pressure of 25.0 mN/m.
13
These Langmuir monolayers were compressed at 10 cm2/min to a surface pressure of 1.0 mN/m, at 5 cm2/min to a surface pressure of 14.0 mN/m, and, finally, at 2 cm2/min to the deposition pressure of 30 mN/m. The monolayers were then deposited as LB films onto the electrode-patterned poly-Si substrates on the upstroke at 1 mm/min, after equilibrating for 3 min. The monolayers transferred at a stoichiometry of [2]catenane4+ + 6Na+ + 4 PF6– + 6 DMPA– and the following areas per molecular complex: (i) 125 Å2 for TTF/NP-[2]catenane, (ii) 160 Å2 for the parent BPP34C10-[2]catenane, and (iii) 90 Å2 for the cyclophane on its own.
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The poly-Si electrodes were fabricated as follows. Low-pressure SiH4 CVD was used to deposit 1500 Å of amorphous Si onto 1100 Å of SiO2 on a Si<100> wafer at 525°C. The film was exposed to air at room temperature for several minutes to form a passivating SiO2 layer and then crystallized under N2 at 650°C. Poly-Si films were implanted with 55-keV P+ ions, and a 1-μm film of SiO2 was grown by CVD to prevent outgassing of the phosphorus. The dopant P atoms were activated at 1000°C, and then, a 6:1 mixture of NH4F(aq):HF(aq) was used to etch away the SiO2. Electrodes were patterned by using standard photolithography techniques.
16
LB films were deposited onto nonpatterned substrates of identically cleaned SiO2 and poly-Si, and contact angles of H2O (18.2 megohms, millipure) on the substrate were measured as a check of monolayer quality, with the following results: cleaned SiO2 (0°), cleaned poly-Si (11°), eicosanoic acid on SiO2 (75°), eicosanoic acid on poly-Si (72°), TTF/NP-[2]catenane on SiO2 (108°), and TTF/NP-[2]catenane on poly-Si (108°). The subphase for all monolayer transfers was 6.4 mM CdCl2(aq), adjusted to pH 8.5 with NaOH(aq).
17
We advocate the term “co-conformation” to describe the different three-dimensional spatial arrangements of the components of mechanically interlocked molecules like catenanes. Here, we use the term “co-conformer” in reference to the [A0] and [B+] structures, recognizing that, strictly speaking, because of their different redox characteristics, they are not isomers.
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This research was supported by the Defense Advanced Research Projects Agency and by the NSF. C.P.C. is an employee of the Hewlett-Packard Company. We acknowledge T. Kamins (Hewlett-Packard) for useful advice in preparing the poly-Si electrodes and the staff at the University of California at Los Angeles (UCLA) Nanoelectronics Research Facility for helpful advice in device fabrication. A. Pease (UCLA) designed the artwork used in Fig. 1.
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Published In
Science
Volume 289 | Issue 5482
18 August 2000
18 August 2000
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Received: 16 February 2000
Accepted: 30 June 2000
Published in print: 18 August 2000
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- Charles P. Collier et al.
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