Oxygen-vacancy-related low-frequency dielectric relaxation and electrical conduction in Bi:SrTiO3

Chen Ang, Zhi Yu, and L. E. Cross
Phys. Rev. B 62, 228 – Published 1 July 2000
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Abstract

The temperature dependence of dielectric properties and electrical conduction of (Sr11.5xBix)TiO3(0.0133<~x<~0.133) was measured from 10 to 800 K. Three sets of oxygen vacancies related dielectric peaks (peaks A, B, and C) were observed. These peaks could be greatly suppressed or eliminated by annealing the samples in an oxidizing atmosphere, and enhanced or recreated by annealing in a reducing atmosphere. The results show that the Maxwell-Wagner polarization is not the main mechanism, and the Skanavi’s model also cannot be directly applied. A tentative explanation was suggested. Peak A, observed in the temperature range of 100–350 K with the activation energy for dielectric relaxation ErelaxA=0.320.49 eV, is attributed to the coupling effect of the conduction electrons with the motion of the off-centered Bi and Ti ions; the conduction carriers in this temperature range are from the first ionization of oxygen vacancies (Vo). Peaks B and C are also discussed.

  • Received 23 December 1999

DOI:https://doi.org/10.1103/PhysRevB.62.228

©2000 American Physical Society

Authors & Affiliations

Chen Ang and Zhi Yu

  • Department of Physics, Department of Materials Science and Engineering, Zhejiang University, 310027 Hangzhou, People’s Republic of China
  • Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802

L. E. Cross

  • Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802

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Vol. 62, Iss. 1 — 1 July 2000

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