Surface topography in scanning tunneling microscopy: A free-electron model

W. Sacks, S. Gauthier, S. Rousset, J. Klein, and M. A. Esrick
Phys. Rev. B 36, 961 – Published 15 July 1987
PDFExport Citation

Abstract

The topographic image as given by scanning tunneling microscopy (STM) is deduced in analytic form in a free-electron, or Sommerfeld model. The method is non-numerical and employs perturbed wave functions for an arbitrarily modified plane metal surface to approximate the local density of states (LDOS), at the Fermi level. The curves of constant LDOS, hence also the contours followed by the probe in an s-wave tip model, are calculated in terms of h(x?), a surface profile function. The image of an arbitrary periodic or nonperiodic surface structure is determined by contours of the form z(x?)=z¯+Δ(x?,) where is the average probe-surface separation, and Δ(x?,) is a convolution over h(x?). We also discuss the parallel and perpendicular resolution of surface structures such as a one- or two-dimensional Gaussian, a perfect step, and a cosine surface, as a function of distance and tip radius. We find there is considerable smoothing of the image in STM for finite surface defects for typical tip-surface separations and tip radii.

  • Received 16 December 1986

DOI:https://doi.org/10.1103/PhysRevB.36.961

©1987 American Physical Society

Authors & Affiliations

W. Sacks, S. Gauthier, S. Rousset, and J. Klein

  • Groupe de Physique des Solides de l’Ecole Normale Supérieure, Université Paris VII Tour 23, 2 place Jussieu, 75251 Paris Cédex 05, France

M. A. Esrick

  • Physics Department, Loyola College in Maryland, Baltimore, Maryland 21210

References (Subscription Required)

Click to Expand
Issue

Vol. 36, Iss. 2 — 15 July 1987

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×