Biased Surface Fluctuations due to Current Stress

O. Bondarchuk, W. G. Cullen, M. Degawa, E. D. Williams, T. Bole, and P. J. Rous
Phys. Rev. Lett. 99, 206801 – Published 12 November 2007

Abstract

Direct correlation between temporal structural fluctuations and electron wind force is demonstrated, for the first time, by STM imaging and analysis of atomically resolved motion on a thin film surface under large applied current (105A/cm2). The magnitude of the momentum transfer between current carriers and the geometrically constrained atoms in the fluctuating structure is at least 5× to 15× (±1σ range) larger than for freely diffusing adatoms. Corresponding changes in surface resistivity will contribute significant fluctuation signature to nanoscale electronic properties.

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  • Received 13 January 2007

DOI:https://doi.org/10.1103/PhysRevLett.99.206801

©2007 American Physical Society

Authors & Affiliations

O. Bondarchuk*, W. G. Cullen, M. Degawa, and E. D. Williams

  • Department of Physics University of Maryland at College Park, College Park, Maryland 20742-4111, USA

T. Bole and P. J. Rous

  • Department of Physics University of Maryland Baltimore County, 1000 Hilltop Circle, Baltimore, Maryland 21250, USA

  • *Present address: Chemical Physics Department, Fritz-Haber-Insitut der Max-Planck-Gesellschaft, Faradayweg 4-6, Berlin, 14195 Germany.

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Issue

Vol. 99, Iss. 20 — 16 November 2007

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