Giant Spin-Orbit Bowing in GaAs1xBix

B. Fluegel, S. Francoeur, A. Mascarenhas, S. Tixier, E. C. Young, and T. Tiedje
Phys. Rev. Lett. 97, 067205 – Published 11 August 2006

Abstract

We report a giant bowing of the spin-orbit splitting energy Δ0 in the dilute GaAs1xBix alloy for Bi concentrations ranging from 0% to 1.8%. This is the first observation of a large relativistic correction to the host electronic band structure induced by just a few percent of isoelectronic doping in a semiconductor material. It opens up the possibility of tailoring the spin-orbit splitting in semiconductors for spintronic applications.

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  • Received 17 October 2005

DOI:https://doi.org/10.1103/PhysRevLett.97.067205

©2006 American Physical Society

Authors & Affiliations

B. Fluegel, S. Francoeur, and A. Mascarenhas

  • National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, Colorado 80401, USA

S. Tixier, E. C. Young, and T. Tiedje

  • Department of Physics and Astronomy, University of British Columbia, Vancouver, British Columbia V6T 1Z4, Canada

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Vol. 97, Iss. 6 — 11 August 2006

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