Enhanced Raman Scattering from Individual Semiconductor Nanocones and Nanowires

Linyou Cao, Bahram Nabet, and Jonathan E. Spanier

Phys. Rev. Lett. 96, 157402 – Published 18 April 2006

Abstract

We report strong enhancement ( $\sim 10^{3}$ ) of the spontaneous Raman scattering from individual silicon nanowires and nanocones as compared with bulk Si. The observed enhancement is diameter ( $d$ ), excitation wavelength ( $λ_{laser}$ ), and incident polarization state dependent, and is explained in terms of a resonant behavior involving incident electromagnetic radiation and the structural dielectric cross section. The variation of the Raman enhancement with $d$ , $λ_{laser}$ , and polarization is shown to be in good agreement with model calculations of scattering from an infinite dielectric cylinder.

Received 30 November 2005

DOI:https://doi.org/10.1103/PhysRevLett.96.157402

Authors & Affiliations

Linyou Cao¹, Bahram Nabet^1,2,3, and Jonathan E. Spanier^1,2,3,*

¹Department of Materials Science and Engineering, Drexel University, 3141 Chestnut Street, Philadelphia Pennsylvania 19104, USA
²Department of Electrical and Computer Engineering, Drexel University, 3141 Chestnut Street, Philadelphia Pennsylvania 19104, USA
³A. J. Drexel Nanotechnology Institute, Drexel University, 3141 Chestnut Street, Philadelphia Pennsylvania 19104, USA

^*To whom correspondence should be addressed. Electronic address: spanier@drexel.edu

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Issue

Vol. 96, Iss. 15 — 21 April 2006

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