An approach is described for stabilizing metal-metal epitaxial interfaces using a thin metallic interlayer. Rutherford backscattering and channeling techniques along with low-energy electron diffraction and keV ${\mathrm{H}\mathrm{e}}^{+}$ ion backscattering are used to demonstrate that an atomically thin layer of Ti deposited at the Fe-Al interface, a system well known for considerable intermixing at room temperature, forms a thin interface alloy that prevents interdiffusion and improves epitaxial growth of Fe on Al(100). The structure is stable up to about 200 °C.

• Received 24 July 2002

DOI:https://doi.org/10.1103/PhysRevLett.90.066101