Onset of Step Antibanding Instability due to Surface Electromigration

Konrad Thürmer, Da-Jiang Liu, Ellen D. Williams, and John D. Weeks
Phys. Rev. Lett. 83, 5531 – Published 27 December 1999
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Abstract

Heating by a direct electric current can produce step bunches on vicinal semiconductor surfaces. Under extreme conditions, steps crossing from one bunch to another bend sufficiently to create bands of steps of the opposite sign (antibands). Unusual large scale scanning tunneling microscopy images reveal a mechanism where field-induced concentration gradients produce a spatially variable step velocity that drives the antiband formation. A continuum step model allows quantitative analysis of crossing step shapes, yielding an effective charge for the diffusing adatoms of qeff=0.13 electron units at 1270 °C.

  • Received 16 June 1999

DOI:https://doi.org/10.1103/PhysRevLett.83.5531

©1999 American Physical Society

Authors & Affiliations

Konrad Thürmer1, Da-Jiang Liu1,*, Ellen D. Williams1,3, and John D. Weeks2,3

  • 1Department of Physics, University of Maryland, College Park, Maryland 20742-4111
  • 2Department of Chemistry, University of Maryland, College Park, Maryland 20742-2021
  • 3Institute for Phyiscal Science and Technology, University of Maryland, College Park, Maryland 20742-2431

  • *Present address: Ames Laboratory, Iowa State University, Ames, Iowa 50011.

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Issue

Vol. 83, Iss. 26 — 27 December 1999

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