High-resolution electron-energy-loss spectroscopy of thin films of <span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mrow><msub><mrow><mi mathvariant="normal">C</mi></mrow><mrow><mn>60</mn></mrow></msub></mrow></math></span> on Si(100)

G. Gensterblum; J. J. Pireaux; P. A. Thiry; R. Caudano; J. P. Vigneron; Ph. Lambin; A. A. Lucas; W. Krätschmer

doi:10.1103/PhysRevLett.67.2171

High-resolution electron-energy-loss spectroscopy of thin films of $C_{60}$ on Si(100)

G. Gensterblum, J. J. Pireaux, P. A. Thiry, R. Caudano, J. P. Vigneron, Ph. Lambin, A. A. Lucas, and W. Krätschmer

Phys. Rev. Lett. 67, 2171 – Published 14 October 1991

Abstract

We report on the first measurements by high-resolution electron-energy-loss spectroscopy of the elementary excitations of $C_{60}$ thin films deposited on Si(100). By varying the primary electron energy, the spectrum extending from the far ir to the far vuv has been investigated. Many spectral features are comparable to earlier observations by photon, photoelectron, and neutron spectroscopies. New molecular excitations are revealed including the lowest electronic excitation at 1.5 eV and collective excitations at 6.3 and 28 eV.