Structurally induced optical transitions in Ge-Si superlattices

T. P. Pearsall; J. Bevk; L. C. Feldman; J. M. Bonar; J. P. Mannaerts; A. Ourmazd

doi:10.1103/PhysRevLett.58.729

Structurally induced optical transitions in Ge-Si superlattices

T. P. Pearsall, J. Bevk, L. C. Feldman, J. M. Bonar, J. P. Mannaerts, and A. Ourmazd

Phys. Rev. Lett. 58, 729 – Published 16 February 1987; Erratum Phys. Rev. Lett. 58, 1053 (1987)

Abstract

Using electroreflectance spectroscopy, we have observed new optical transitions near 0.76, 1.25, and 2.31 eV in an ordered strained-layer Ge-Si superlattice. The possible origins of these transitions are discussed in terms of modification of the electronic band structure by the sample structure.