Electronic Structure of the Si(111)2 × 1 Surface by Scanning-Tunneling Microscopy

Joseph A. Stroscio, R. M. Feenstra, and A. P. Fein
Phys. Rev. Lett. 57, 2579 – Published 17 November 1986
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Abstract

The tunneling current is measured as a function of voltage, lateral position, and vertical separation between a tungsten probe tip and a Si(111)2 × 1 surface. A rich spectrum is obtained in the ratio of differential to total conductivity, revealing the structure of the surface-state bands. The magnitude of the parallel wave vector for certain surface states is determined from the decay length of the tunneling current. Real-space images of the surface states reveal a phase reversal between those states on either side of the surface-state band gap.

  • Received 30 June 1986

DOI:https://doi.org/10.1103/PhysRevLett.57.2579

©1986 American Physical Society

Authors & Affiliations

Joseph A. Stroscio, R. M. Feenstra, and A. P. Fein

  • IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598

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Issue

Vol. 57, Iss. 20 — 17 November 1986

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