Silicon Melt, Regrowth, and Amorphization Velocities During Pulsed Laser Irradiation

Michael O. Thompson, J. W. Mayer, A. G. Cullis, H. C. Webber, N. G. Chew, J. M. Poate, and D. C. Jacobson
Phys. Rev. Lett. 50, 896 – Published 21 March 1983
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Abstract

Direct experimental measurements of the melt-in, resolidification, and amorphization velocities for pulsed (2.5 to 10 ns) uv and ruby-laser irradiation have been made on 100 silicon on sapphire. An experimental value for the critical amorphization velocity in 100 Si has been measured as 15 m/s. Epitaxial resolidification was observed from 5 to 15 m/s. Additionally, melt-in velocities in excess of 200 m/s were observed for 2.5-ns ruby irradiation.

  • Received 23 August 1982

DOI:https://doi.org/10.1103/PhysRevLett.50.896

©1983 American Physical Society

Authors & Affiliations

Michael O. Thompson and J. W. Mayer

  • Department of Material Science, Cornell University, Ithaca, New York 14853

A. G. Cullis, H. C. Webber, and N. G. Chew

  • Royal Signals and Radar Establishment, Malvern, Worcestershire WR143PS, United Kingdom

J. M. Poate and D. C. Jacobson

  • Bell Laboratories, Murray Hill, New Jersey 07974

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Vol. 50, Iss. 12 — 21 March 1983

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