Normal Photoelectron Diffraction of the Se <span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mn>3</mn><mi>d</mi></math></span> Level in Se Overlayers on Ni(100)

S. D. Kevan; D. H. Rosenblatt; D. Denley; B. -C. Lu; D. A. Shirley

doi:10.1103/PhysRevLett.41.1565

Normal Photoelectron Diffraction of the Se $3 d$ Level in Se Overlayers on Ni(100)

S. D. Kevan, D. H. Rosenblatt, D. Denley, B. -C. Lu, and D. A. Shirley

Phys. Rev. Lett. 41, 1565 – Published 27 November 1978

Abstract

Modulations of up to a factor of 2 were observed in the Se $3 d$ photoelectron intensity normal to the surface, for selenium overlayers on Ni(100), as the photon energy was varied from 90 to 240 eV. Excellent agreement of peak energies with predictions by Tong and Li was obtained for both the $c (2 \times 2)$ and $p (2 \times 2)$ structures, using the hollow-site geometry. Normal photoelectron diffraction appears to have promise as a surface structural method.

Received 18 September 1978

DOI:https://doi.org/10.1103/PhysRevLett.41.1565

Authors & Affiliations

S. D. Kevan, D. H. Rosenblatt, D. Denley^*, B. -C. Lu, and D. A. Shirley

Materials and Molecular Research Division, Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720, and Department of Chemistry, University of California, Berkeley, California 94720