Simple Band Model for Amorphous Semiconducting Alloys

Morrel H. Cohen, H. Fritzsche, and S. R. Ovshinsky
Phys. Rev. Lett. 22, 1065 – Published 19 May 1969
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Abstract

Because of the near perfect local satisfaction of the valence requirements of each atom, which is complemented by the positional and compositional disorder, covalently bonded amorphous alloys are intrinsic semiconductors. We describe a band model with some novel features, which successfully describes several important effects observed in these amorphous semiconducting alloys.

  • Received 21 March 1969

DOI:https://doi.org/10.1103/PhysRevLett.22.1065

©1969 American Physical Society

Authors & Affiliations

Morrel H. Cohen and H. Fritzsche

  • The James Franck Institute and Department of Physics, University of Chicago, Chicago, Illinois 60637

S. R. Ovshinsky

  • Energy Conversion Devices, Inc., Troy, Michigan 48084

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Issue

Vol. 22, Iss. 20 — 19 May 1969

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