Evolution of the Raman spectra from single-, few-, and many-layer graphene with increasing disorder

E. H. Martins Ferreira, Marcus V. O. Moutinho, F. Stavale, M. M. Lucchese, Rodrigo B. Capaz, C. A. Achete, and A. Jorio
Phys. Rev. B 82, 125429 – Published 15 September 2010

Abstract

We report on the micro-Raman spectroscopy of monolayer, bilayer, trilayer, and many layers of graphene (graphite) bombarded by low-energy argon ions with different doses. The evolution of peak frequencies, intensities, linewidths, and areas of the main Raman bands of graphene is analyzed as function of the distance between defects and number of layers. We describe the disorder-induced frequency shifts and the increase in the linewidth of the Raman bands by means of a spatial-correlation model. Also, the evolution of the relative areas AD/AG, AD/AG, and AG/AG is described by a phenomenological model. The present results can be used to fully characterize disorder in graphene systems.

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  • Received 3 May 2010

DOI:https://doi.org/10.1103/PhysRevB.82.125429

©2010 American Physical Society

Authors & Affiliations

E. H. Martins Ferreira1, Marcus V. O. Moutinho2, F. Stavale1, M. M. Lucchese1,3, Rodrigo B. Capaz1,2, C. A. Achete1,4, and A. Jorio1,5

  • 1Divisão de Metrologia de Materiais, Instituto Nacional de Metrologia, Normalização e Qualidade Industrial (INMETRO), Duque de Caxias 25250-020, RJ, Brazil
  • 2Instituto de Física, Universidade Federal do Rio de Janeiro, Cx. Postal 68528, Rio de Janeiro 21941-972, RJ, Brazil
  • 3Centro de Ciências Exatas e Tecnológicas, Universidade Federal do Pampa, Bagé, Rio Grande do Sul, Brazil
  • 4Programa de Engenharia Metalúrgica e de Materiais (PEMM), Universidade Federal do Rio de Janeiro, Cx. Postal 68505, Rio de Janeiro 21945-970, RJ, Brazil
  • 5Depto. de Física, Universidade Federal de Minas Gerais, Belo Horizonte 30123-970, MG, Brazil

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Issue

Vol. 82, Iss. 12 — 15 September 2010

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