Symmetry-induced singularities of the dispersion surface curvature and high sensitivities of a photonic crystal

Wei Jiang and Ray T. Chen
Phys. Rev. B 77, 075104 – Published 6 February 2008

Abstract

We rigorously analyze the dispersion function and the curvature of the dispersion surface of a photonic crystal to explore the fundamental limit of its angular sensitivities. With insight gained from group theory, we find that symmetry induced degeneracy gives rise to a singular dispersion surface curvature and a nonvanishing group velocity simultaneously. Near such a singularity, high angular sensitivities can be achieved at low optical loss. This phenomenon exists generally in most common two-dimensional and three-dimensional photonic crystal lattices, although it occurs only for certain photonic bands as dictated by symmetry. This symmetry-induced effect is absent in one-dimensional crystals. Rigorous formulas of the sensitivities of the light beam directions to wavelength and refractive index changes are derived. Individual contributions of the dispersion surface curvature and group velocity to these sensitivities are separated. In the absence of the Van Hove singularity, a singular dispersion surface curvature gives rise to ultrahigh dispersion dθdλ>103degnm and refractive index sensitivity dθdna>104deg without compromising optical transmission. The angular dispersion value is significantly larger than those previously reported for the superprism effect and is not due to slow group velocity. We also discuss how various parameters intrinsic and extrinsic to a photonic crystal may suppress or enhance the angular sensitivities according to the rigorous formulas we obtain.

  • Figure
  • Figure
  • Figure
  • Figure
  • Received 11 October 2007

DOI:https://doi.org/10.1103/PhysRevB.77.075104

©2008 American Physical Society

Authors & Affiliations

Wei Jiang1,2,* and Ray T. Chen1

  • 1Department of Electrical and Computer Engineering and Microelectronics Research Center, University of Texas, Austin, Texas 78758, USA
  • 2Department of Electrical and Computer Engineering and Institute for Advanced Materials, Devices, and Nanotechnology, Rutgers University, Piscataway, New Jersey 08854, USA

  • *wjiangnj@ece.rutgers.edu

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 77, Iss. 7 — 15 February 2008

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×