Formation of carbon nanotube semiconductor-metal intramolecular junctions by self-assembly of vacancy defects

Gun-Do Lee, Cai-Zhuang Wang, Jaejun Yu, Euijoon Yoon, Nong-Moon Hwang, and Kai-Ming Ho
Phys. Rev. B 76, 165413 – Published 11 October 2007

Abstract

Atomistic processes of carbon nanotube semiconductor-metal intramolecular junction formation are investigated by tight-binding molecular dynamics simulations and first-principles total energy calculations. We show that the junctions can be formed by reconstruction of vacancy clusters through a series of generalized Stone-Wales transformations [Chem. Phys. Lett. 128, 501 (1986)]. Our simulations suggest a mechanism for synthesis of carbon nanotube semiconductor-metal intramolecular junctions with specific locations and controlled sizes and show the possibility of application to nanoelectronic devices. Our simulations study also provides a microscopic explanation to the superplastic deformation in single-wall carbon nanotubes.

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  • Received 21 August 2007

DOI:https://doi.org/10.1103/PhysRevB.76.165413

©2007 American Physical Society

Authors & Affiliations

Gun-Do Lee1, Cai-Zhuang Wang2, Jaejun Yu3, Euijoon Yoon1, Nong-Moon Hwang4, and Kai-Ming Ho2

  • 1Department of Materials Science and Engineering and Inter-university Semiconductor Research Center (ISRC), Seoul National University, Seoul 151-742, Korea
  • 2Ames Laboratory and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011, USA
  • 3Department of Physics and Astronomy and Center for Strongly Correlated Materials Research, Seoul National University, Seoul 151-747, Korea
  • 4National Research Laboratory of Charged Nanoparticles and Department of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea

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Issue

Vol. 76, Iss. 16 — 15 October 2007

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