Calculation of point defect parameters in diamond

P. A. Varotsos
Phys. Rev. B 75, 172107 – Published 31 May 2007; Erratum Phys. Rev. B 78, 019902 (2008)

Abstract

We show that the most recent values of the defect entropy and the defect enthalpy for the vacancy formation in diamond have a ratio which is comparable to the one predicted by a model suggested three decades ago [P. Varotsos and K. Alexopoulos, Phys. Rev. B 15, 4111 (1977); 18, 2683 (1978)]. This model, which interconnects the formation Gibbs energy with the bulk elastic and expansivity data, has been also recently found of value in high Tc superconductors as well as in glass-forming liquids.

  • Received 19 January 2007

DOI:https://doi.org/10.1103/PhysRevB.75.172107

©2007 American Physical Society

Erratum

Authors & Affiliations

P. A. Varotsos*

  • Solid State Section, Physics Department, University of Athens, Panepistimiopolis, Zografos, 157 84 Athens, Greece and Solid Earth Physics Institute, Physics Department, University of Athens, Panepistimiopolis, Zografos, 157 84 Athens, Greece

  • *Electronic address: pvaro@otenet.gr

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Issue

Vol. 75, Iss. 17 — 1 May 2007

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