Role of impact ionization in multiple exciton generation in PbSe nanocrystals

G. Allan and C. Delerue
Phys. Rev. B 73, 205423 – Published 25 May 2006

Abstract

In the impact ionization process, a hot carrier relaxes by generating an exciton. We present tight binding calculations showing that the rate of this process in PbSe nanocrystals has a strong energy dependence and that the relaxation energy increases linearly with the carrier excess energy. The impact ionization can be extremely fast (fs) but it is not enhanced by the confinement in contrast to the usual belief. It explains the multiple exciton generation observed experimentally in these dots except at high photon energy where more complex many-particle phenomena are involved.

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  • Received 27 March 2006

DOI:https://doi.org/10.1103/PhysRevB.73.205423

©2006 American Physical Society

Authors & Affiliations

G. Allan and C. Delerue*

  • Institut d’Electronique, de Microélectronique et de Nanotechnologie (UMR CNRS 8520), Département ISEN, 41 Boulevard Vauban, F-59046 Lille Cedex, France

  • *Electronic address: christophe.delerue@isen.fr

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Issue

Vol. 73, Iss. 20 — 15 May 2006

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